Semiconductor device and manufacturing method of the same

ABSTRACT

A semiconductor device includes a semiconductor element, a transparent member separated from the semiconductor element by a designated length and facing the semiconductor element, a sealing member sealing an edge surface of the transparent member and an edge part of the semiconductor element, and a shock-absorbing member provided between the edge surface of the transparent member and the sealing member and easing a stress which the transparent member receives from the sealing member or the semiconductor element.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to semiconductor devices andmanufacturing methods of the same, and more specifically, to asemiconductor device packaged or forming a module by sealing asemiconductor element and a manufacturing method of the same.

2. Description of the Related Art

A solid-state image sensing device, formed by packaging and modularizinga solid-state image sensor with a transparent member such as glass, awiring board, a wiring connecting the solid-state image sensor and thewiring board, sealing resin, and others, is well-known. Here, thesolid-state image sensing device is, for example, an image sensor suchas a Charge Couple Device (CCD), or Complementary Metal OxideSemiconductor (CMOS).

FIG. 1 is a cross-sectional view of a related art solid-state imagesensing device.

Referring to FIG. 1, a solid-state image sensing device 10 has astructure where a solid-state image sensor 8 is mounted on a wiringboard 4 having a lower surface where plural bumps 2 are formed, via adie bonding member 6. A large number of micro lenses 9 are provided onan upper surface of the solid-state image sensor 8. The solid-stateimage sensor 8 is electrically connected to the wiring board 4 by abonding wire 7.

In addition, a transparent member 1 such as glass is mounted above thesolid-state image sensor 8 via a space 3. Parts of the solid-state imagesensor 8 and the wiring board 4 where the bonding wires 7 are provided,external circumferential parts of the transparent member 1, and sideparts of the spacers 3 are sealed by sealing resin 5.

Thus, the solid-state image sensor 8 is sealed by the transparent member1 and the sealing resin 5. See Japan Laid-Open Patent ApplicationPublications No. 62-67863, No 2000-323692, and No. 2002-16194.

However, coefficients of thermal expansion of members forming thesolid-state image sensing device 10 shown in FIG. 1 are different fromeach other. For example, the coefficient of thermal expansion of silicon(Si) used as the solid-state image sensor 8 is 3×10⁻⁶/° C., thecoefficient of thermal expansion of glass used as the transparent member1 is 7×10⁻⁶/° C., the coefficient of thermal expansion of the sealingresin 5 is 8×10⁻⁶/° C., and the coefficient of thermal expansion of thewiring board 4 is 16×10⁻⁶/° C.

In addition, for example, the temperature inside of a reflow hearth in areflow process for mounting a package such as a camera module on thewiring board 4 reaches around 260° C. Heat is applied as a reliabilitytest of the solid-state image sensing device 10. Furthermore, in normaluse of the solid-state image sensing device 10, the solid-state imagesensing device 10 may be put under atmospheric conditions wherein thetemperature in summer may be higher than 80° C.

Accordingly, under the atmospheric conditions wherein such a temperaturechange is made, the members may expand or contract by heat due to thedifference of the coefficients of thermal expansion of the members, sothat the transparent member 1 may receive stress from the sealing resin5 and/or the wiring board 4. As a result of this, an interface of thetransparent member 1 and the sealing resin 5, shown by a dotted line inFIG. 1, may peel off, or the transparent member 1 or the solid-stateimage sensing device 10 may be damaged.

Glass and others used as the transparent member 1 are strong againstcompression but weak (may be broken) against tension. Therefore, if thetransparent member receives tension stress due to the difference of thecoefficients of thermal expansion of the sealing resin 5 or the wiringboard 4 and the transparent member 1, the transparent member 1 may bebroken.

As discussed above, since the coefficient of thermal expansion of thewiring board 4 is greater than the coefficients of thermal expansion ofthe transparent member 1 and the sealing resin 5, the transparent member1 and the sealing resin 5 may be pulled (tensioned) due to the thermalexpansion of the wiring board 4. As a result of this, the transparentmember 4 may be broken.

Because of this, a ceramic board having a smaller coefficient of thermalexpansion may be used as the wiring board 4. However, the ceramic boardis expensive and use of the ceramic board causes a high price of thesolid-state image sensing device 10.

Similarly, in order to prevent the generation of the above-mentionedstress, the wiring board 4 may be formed by the same material as thetransparent member 1 such as glass, and the solid-state image sensor 8may be put between the transparent member 1 such as glass or the wiringboard 4 made of glass, so that the members having the same coefficientsof thermal expansion may be provided at upper and lower part of thesolid-state image sensor 8. However, this structure is not preferablebecause the wiring board made of glass is also relatively expensive.

In addition, an air part is formed between the transparent member 1 andthe solid-state image sensor 8 by the spacers 3 in the solid-state imagesensing device 10 shown in FIG. 1. The air part contributes to a lightcondensing effect by the micro lens 9.

Japan Laid-Open Patent Application Publications No. 2003-197656 and No.2003-163342 disclose a manufacturing method of the solid-state imagesensing device having such an air part. However, in the above-mentionedmanufacturing methods, it is necessary to prepare the spacer which fitsto the size of the solid-state image sensor, namely a light receivingarea. In addition, in the above-mentioned manufacturing methods, in acase where an anti-reflection film (AR coating film) for improving anoptical property is provided on the transparent member, it is extremelydifficult to form the spacer and a foreign article may become adhered tothe transparent member.

SUMMARY OF THE INVENTION

Accordingly, it is a general object of the present invention to providea novel and useful semiconductor device and manufacturing method of thesame.

Another and more specific object of the present invention is to providea semiconductor device having high reliability whereby destruction ofthe semiconductor device or members forming the semiconductor device dueto the stress generated based on the difference of the coefficients ofthermal expansion of the members forming the semiconductor device may beprevented, and a manufacturing method of the semiconductor device.

It is also an object of the present invention to provide a manufacturingmethod of a semiconductor device whereby the semiconductor device can beeasily manufactured without preparing a specific apparatus or memberwhich fits the size of the semiconductor device.

The above object of the present invention is achieved by a semiconductordevice, including:

a semiconductor element,

a transparent member separated from the semiconductor element by adesignated length and facing the semiconductor element,

a sealing member sealing an edge surface of the transparent member andan edge part of the semiconductor element, and

a shock-absorbing member provided between the edge surface of thetransparent member and the sealing member and easing a stress which thetransparent member receives from the sealing member or the semiconductorelement.

The above object of the present invention is also achieved by amanufacturing method of a semiconductor device, the semiconductor deviceincluding a semiconductor element and a transparent member separatedfrom the semiconductor element by a designated length and facing thesemiconductor element, the manufacturing method including the steps of:

a) forming a piercing part in the transparent member adhered on anadhesive tape and forming a groove by cutting a part of the adhesivetape corresponding to the piercing part,

b) filling in the piercing part and the groove with a material of ashock-absorbing part configured to ease a stress in the transparentmember, and curing the material of the shock-absorbing part,

c) cutting the material of the shock-absorbing part provided in thepiercing part and the groove, and

d) peeling off the transparent member from the adhesive tape.

Other objects, features, and advantages of the present invention will become more apparent from the following detailed description when read inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a related art solid-state imagesensing device;

FIG. 2 is a cross-sectional view of a solid-state image sensing deviceof a first embodiment of the present invention;

FIG. 3 is a cross-sectional view of a solid-state image sensing deviceof a first modified example of the first embodiment of the presentinvention;

FIG. 4 is a cross-sectional view of a solid-state image sensing deviceof a second modified example of the first embodiment of the presentinvention;

FIG. 5 is a cross-sectional view of a solid-state image sensing deviceof a third modified example of the first embodiment of the presentinvention;

FIG. 6 is a cross-sectional view of a solid-state image sensing deviceof a fourth modified example of the first embodiment of the presentinvention;

FIG. 7 is a cross-sectional view of a solid-state image sensing deviceof a second embodiment of the present invention;

FIG. 8 is a cross-sectional view of a solid-state image sensing deviceof a third embodiment of the present invention;

FIG. 9 is a cross-sectional view of a solid-state image sensing deviceof a fourth embodiment of the present invention;

FIG. 10 is a cross-sectional view of a solid-state image sensing deviceof a fifth embodiment of the present invention;

FIG. 11 is a cross-sectional view of a solid-state image sensing deviceof a sixth embodiment of the present invention;

FIG. 12 is a view (part 1) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 2, of a seventhembodiment of the present invention;

FIG. 13 is a view (part 2) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 2, of the seventhembodiment of the present invention;

FIG. 14 is a view (part 3) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 2, of the seventhembodiment of the present invention;

FIG. 15 is a view (part 4) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 2, of the seventhembodiment of the present invention;

FIG. 16 is a view (part 5) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 2, of the seventhembodiment of the present invention;

FIG. 17 is a view (part 6) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 2, of the seventhembodiment of the present invention;

FIG. 18 is a view (part 7) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 2, of the seventhembodiment of the present invention;

FIG. 19 is a view (part 8) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 2, of the seventhembodiment of the present invention;

FIG. 20 is a view (part 1) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 4, of an eighthembodiment of the present invention;

FIG. 21 is a view (part 2) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 4, of the eighthembodiment of the present invention;

FIG. 22 is a view (part 3) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 4, of the eighthembodiment of the present invention;

FIG. 23 is a view (part 4) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 4, of the eighthembodiment of the present invention;

FIG. 24 is a view (part 5) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 4, of the eighthembodiment of the present invention;

FIG. 25 is a view (part 6) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 4, of the eighthembodiment of the present invention;

FIG. 26 is a view (part 7) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 4, of the eighthembodiment of the present invention;

FIG. 27 is a view (part 8) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 4, of the eighthembodiment of the present invention;

FIG. 28 is a view (part 9) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 4, of the eighthembodiment of the present invention;

FIG. 29 is a view (part 1) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 3, of a ninth embodimentof the present invention;

FIG. 30 is a view (part 2) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 3, of the ninthembodiment of the present invention;

FIG. 31 is a view (part 3) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 3, of the ninthembodiment of the present invention;

FIG. 32 is a view (part 4) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 3, of the ninthembodiment of the present invention;

FIG. 33 is a view (part 1) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 5, of a tenth embodimentof the present invention;

FIG. 34 is a view (part 2) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 5, of the ninthembodiment of the present invention;

FIG. 35 is a view (part 3) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 5, of the ninthembodiment of the present invention;

FIG. 36 is a view (part 1) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 7, of an eleventhembodiment of the present invention;

FIG. 37 is a view (part 2) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 7, of the eleventhembodiment of the present invention;

FIG. 38 is a view (part 3) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 7, of the eleventhembodiment of the present invention;

FIG. 39 is a view (part 4) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 7, of an eleventhembodiment of the present invention;

FIG. 40 is a view for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 8, of a twelfthembodiment of the present invention;

FIG. 41 is a view for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 9, of a thirteenthembodiment of the present invention;

FIG. 42 is a view (part 1) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 10, of a fourteentheighth embodiment of the present invention;

FIG. 43 is a view (part 2) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 10 of the fourteenthembodiment of the present invention-;

FIG. 44 is a view (part 3) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 10, of the fourteenthembodiment of the present invention;

FIG. 45 is a view (part 4) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 10, of the fourteenthembodiment of the present invention; and

FIG. 46 is a view (part 5) for explaining a manufacturing method of thesolid-state image sensing device shown in FIG. 10, of the fourteenthembodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A description is given below, with reference to the FIG. 2 through FIG.46 of embodiments of the present invention.

For the convenience of explanation, a description of a semiconductordevice of an embodiment of the present invention is given with referenceto FIG. 2 through FIG. 11, and then a description of a manufacturingmethod of the semiconductor device of an embodiment of the presentinvention is given with reference to FIG. 12 through FIG. 46.

[Semiconductor Device]

In the followings, a solid-state image sensing device is explained as anexample of a semiconductor device of the present invention.

First, a solid-state image sensing device of a first embodiment of thepresent invention is discussed with reference to FIG. 2. Here, FIG. 2 isa cross-sectional view of the solid-state image sensing device of thefirst embodiment of the present invention.

Referring to FIG. 2, a solid-state image sensing device 20 has astructure where a solid image sensor 28 as a semiconductor element ispackaged (forms a module) with a transparent member 21, a bonding wire27, a wiring board 24, sealing resin 25, and others. The solid imagesensor 28 is sealed by the transparent member 21 and the sealing resin25. In other words, the solid-state image sensor 28 is mounted on thewiring board 24 having a lower surface where plural outside connectionterminals 22 are formed, via a die bonding member 26.

A large number of micro lenses (light receiving lenses) 29 are providedon an upper surface of the solid-state image sensor 28. An electrode ofthe solid-state image sensor 28 is electrically connected to anelectrode of the wiring board 24 by a bonding wire 27.

In addition, the transparent member 21 is provided at an upper part ofthe solid-state image sensor 28 so as to be separated from thesolid-state image sensor 28 at a designated distance “a”.

Since the transparent member 21 is separated from the solid-state imagesensor 28 at a designated distance “a”, an air part is formed betweenthe transparent member 21 and the solid-state image sensor 28.

Because of the difference of indexes of reflection between air and themicro lens 29, light incident through the transparent member 21 iseffectively incident on a light receiving element (photo diode) formedon a main surface of the solid-state image sensor 28.

Silicon (Si), for example, can be used as a semiconductor substrateforming the solid-state image sensor 28. Glass, transparent plastic,crystal, quartz, sapphire, or the like can be used as the transparentmember 21. However, the present invention is not limited to theseexamples.

The sealing resin 25 is provided on a part where the bonding wires 27are provided of the solid-state image sensor 28 and the wiring board 24so that a top surface of the sealing resin 25 is situated as almostplanar with an upper surface of the transparent member 21. Here, theupper surface of the transparent member 21 is opposite to a surfacefacing the solid-state image sensor 28.

Silicon group resin, acrylic resin, epoxy resin, or the like can be usedas the sealing resin 25. However, the present invention is not limitedto these examples.

In this embodiment, under this structure, a shock-absorbing member 100is provided, in an area where the micro lens 29 is not provided on anupper surface of the solid-state image sensor 28, and between thesealing resin 25 and the transparent member 21, that is, between thesealing resin 25 and an external circumferential side surface of thetransparent member 21.

A resin material having Young's modulus of approximately 0.1 through 10GPa, such as epoxy resin, denatured polymer, or denatured silicon, maybe used as the shock-absorbing member 100.

When the shock-absorbing member 100 is provided on the externalcircumferential surface of the transparent member 21, the width (lengthin upper and lower directions in FIG. 2) of the shock-absorbing member100 is longer than the width (length in upper and lower directions inFIG. 2) of the transparent member 21 and a designated amount of theshock-absorbing member 100 projects to a side of the solid-state imagesensor 28. As a result of this, it is possible to form a distance “a”between the transparent member 21 and the solid-state image sensor 28.

The coefficient of thermal expansion of silicon (Si) used as thesolid-state image sensor 28 is 3×10⁻⁶/° C., the coefficient of thermalexpansion of glass used as the transparent member 21 is 7×10⁻⁶/° C., thecoefficient of thermal expansion of the sealing resin 25 is 8×10⁻⁶/° C.,and the coefficient of thermal expansion of the wiring board 24 is16×10⁻⁶/° C.

Although there are differences of the coefficients of thermal expansionas discussed above, a designated stress, given from the sealing resin 25and the wiring board 24 to the transparent member 21 due to the thermalexpansion of the transparent member 21, the sealing resin 25 and thesolid-state image sensor 28 and the difference of the coefficients ofthermal expansion of the members, can be eased and absorbed by theshock-absorbing member 100.

Accordingly, it is possible to prevent the transparent member 21 or thesolid-state image sensing device 20 from being destroyed in amanufacturing process of, a testing step of, or use of the solid-stateimage sensing device 20. Thus, it is possible to improve the reliabilityof the solid-state image sensing device 20.

Next, a solid-state image sensing device of a first modified example ofthe first embodiment of the present invention is discussed withreference to FIG. 3. Here, FIG. 3 is a cross-sectional view of asolid-state image sensing device 30 of the first modified example of thefirst embodiment of the present invention.

Referring to FIG. 3, in the modified example, the shock-absorbing member100 is provided between the sealing resin 25 and the transparent member21, that is, between the sealing resin 25 and an externalcircumferential side surface of the transparent member 21. In addition,a spacer 110 is provided on an area where the micro lens 29 is notprovided of an upper surface of the solid-state image sensor 28. Thespacer 110 is provided from an inside of a projection part of theshock-absorbing member 100 in a light receiving area direction of thesolid-state image sensor 28.

The spacer 110, as well as the projection part of the shock-absorbingmember 100, sets a distance “a” between the transparent member 21 andthe solid-state image sensor 28, so that an air part can be formedbetween the transparent member 21 and the solid-state image sensor 28.As a result of this, it is possible to obtain a light condensing effectof the micro lens 29 formed on the solid-state image sensor 28 maximum.

An adhesive layer formed by, for example, epoxy group resin, can be usedas the spacer 110. However, the present invention is not limited to thisexample.

Next, a solid-state image sensing device of a second modified example ofthe first embodiment of the present invention is discussed withreference to FIG. 4. Here, FIG. 4 is a cross-sectional view of asolid-state image sensing device 40 of the second modified example ofthe first embodiment of the present invention.

Referring to FIG. 4, only a spacer 111 is provided on an area where themicro lens 29 is not provided of an upper surface of the solid-stateimage sensor 28. In other words, in this modified example, unlike theabove-discussed embodiment or the modified example, the shock-absorbingmember 100 does not project from the lower surface of the transparentmember 21, and the spacer 111 is provided between the transparent member21 and the solid-state image sensor 28 and between the shock-absorbingmember 100 having the same width as the transparent member 21 and thesolid-state image sensor 28.

Under this structure, an air part can be formed between the transparentmember 21 and the solid-state image sensor 28 by the spacer 111. As aresult of this, it is possible to obtain a maximum light condensingeffect of the micro lens 29 formed on the solid-state image sensor 28.

Next, a solid-state image sensing device of a third modified example ofthe first embodiment of the present invention is discussed withreference to FIG. 5. Here, FIG. 5 is a cross-sectional view of asolid-state image sensing device 50 of the third modified example of thefirst embodiment of the present invention.

Referring to FIG. 5, the same material as the shock-absorbing member 100is used as the spacer 112. In other words, a member made of a materialthe same as the shock-absorbing member 100 provided between the sealingresin 25 and a circumferential side surface (edge surface) of thetransparent member 21 as the spacer 112 is provided between thetransparent member 21 and the solid-state image sensor 20.

As discussed above, there is a difference of the coefficients of thermalexpansion between the solid-state image sensor 28 and the transparentmember 21. Therefore, stress based on the difference of such coefficientof thermal expansion may be generated between the solid-state imagesensor 28 and the transparent member 21.

In this example, since the same material as the shock-absorbing member100 is used as the spacer 112 forming an air part between thesolid-state image sensor 28 and the transparent member 21, it ispossible effectively prevent the destruction of the transparent member21 due to the stress from the solid-state image sensor 28.

Furthermore, since the same material as the shock-absorbing member 100provided between the circumferential side surface of the transparentmember 21 and the sealing resin 25 is used as the spacer 112 providedbetween the transparent member 21 and the solid-state image sensor 28,it is possible to reduce the manufacturing cost of the solid-state imagesensing device 50.

Next, a solid-state image sensing device of a fourth modified example ofthe first embodiment of the present invention is discussed withreference to FIG. 6. FIG. 6 is a cross-sectional view of a solid-stateimage sensing device 60 of the fourth modified example of the firstembodiment of the present invention.

Referring to FIG. 6, a spacer 113 is made of a material having a Young'smodulus different from that of the shock-absorbing member 100 providedbetween the circumferential side surface (edge surface) of thetransparent member 21 and the sealing resin 25.

As discussed above, the difference of the coefficients of thermalexpansion between the solid state image sensor 28 and the transparentmember 21 is different from the difference of the coefficients ofthermal expansion between the sealing resin 25 and the transparentmember 21. Therefore, if the differences of the coefficients of thermalexpansion of the members are different from each other, amounts of thestress generated based on the differences of the coefficients of thermalexpansion are different.

Thus, in this example, the shock-absorbing member 100 is providedbetween the edge surface of the transparent member 21 and the sealingresin 25. The spacer 113 forming a space between the solid-state imagesensor 28 and the transparent member 21 is made of the material havingthe different Young's modulus of the shock-absorbing member 100provided.

Under this structure, even if the difference of the coefficients ofthermal expansion between the solid state image sensor 28 and thetransparent member 21 is different from the difference of thecoefficients of thermal expansion between the sealing resin 25 and thetransparent member 21, it is possible to ease and absorb the stressgenerated due to the difference of the coefficients of thermal expansionbetween the members so that the destruction of the transparent member 21and others can be prevented.

Next, a solid-state image sensing device of a second embodiment of thepresent invention is discussed with reference to FIG. 7. Here, FIG. 7 isa cross-sectional view of a solid-state image sensing device of a fourthmodified example of a second embodiment of the present invention.

In the following explanations, parts that are the same as the partsshown in the above-referred drawings are given the same referencenumerals, and explanation thereof is omitted.

Referring to FIG. 7, in the solid-state image sensing device 70 of thesecond embodiment, a second shock-absorbing member 101 is provided at anexternal circumferential part of the shock-absorbing member 100 (“thefirst shock-absorbing member 100” in the following explanation of thisembodiment), namely between the sealing resin 25 and a circumferentialside surface (edge surface) of the transparent member 21. The Young'smodulus of the second shock-absorbing member 101 is different from thatof the first shock-absorbing member 100.

When the shock-absorbing members 100 and 101 are provided on theexternal circumferential surface of the transparent member 21, a width(length in upper and lower directions in FIG. 7) of the shock-absorbingmembers 100 and 101 is longer than the width (length in upper and lower,directions in FIG. 7) of the transparent member 21, and a designatedamount of the shock-absorbing members 100 and 101 projects to a side ofthe solid-state image sensor 28. As a result of this, it is possible toform a distance “a” between the transparent member 21 and thesolid-state image sensor 28.

A resin material having Young's modulus of approximately 0.1 through 10GPa, such as epoxy resin, denatured polymer, or denatured silicon, maybe used as the first and second shock-absorbing members 100 and 101.However, in a case where a material having Young's modulus ofapproximately 1 GPa, such as epoxy resin, is used as the firstshock-absorbing members 100, it is preferable to use a resin materialhaving Young's modulus of approximately 0.1 GPa, such as denaturedpolymer, or denatured silicon, as the second shock-absorbing members101.

In other words, it is preferable that the Young's modulus of the secondshock-absorbing members 101 be less than the Young's modulus of thefirst shock-absorbing member 100. As discussed above, since thecoefficient of thermal expansion of the sealing resin 25 is greater thanthe coefficient of thermal expansion of the transparent member 21, thevicinity of the interface of the sealing resin 25 and the transparentmember 21 may receive a bigger stress. Hence, it is preferable that thesecond shock-absorbing member 101 which may be easily deformed and has aYoung's modulus less than the Young's modulus of the firstshock-absorbing member 100 be provided at a side of the sealing resin25, namely a side where the big stress is generated due to the largecoefficient of thermal expansion.

While two kinds of shock-absorbing members, that is the first and secondshock-absorbing members 100 and 101, are provided in a structure shownin FIG. 7, a structure of the shock-absorbing members provided betweenthe sealing resin 25 and the transparent member 21 is not limited tothis example. It is possible to effectively ease the stress generatedbased on the difference of the coefficients of thermal expansion of thesealing resin 25 and the transparent member 21 by selecting the kindsand/or the number of the shock-absorbing members provided between thesealing resin 25 and the transparent member 21.

Next, a solid-state image sensing device of a third embodiment of thepresent invention is discussed with reference to FIG. 8. Here, FIG. 8 isa cross-sectional view of a solid-state image sensing device of thethird embodiment of the present invention.

Referring to FIG. 8, in the solid-state image sensing device 80 of thethird embodiment, the shock-absorbing member 100 is not provided betweenthe sealing resin 25 and the circumferential side surface (edge surface)of the transparent member 21. Instead, an air space 102 is formed alongthe circumferential side surface (edge surface) of the transparentmember 21 between the sealing resin 25 and the circumferential sidesurface (edge surface) of the transparent member 21.

Since the air space 102 is formed between the sealing resin 25 and thecircumferential side surface (edge surface) of the transparent member21, even if the temperature is changed, it is possible to prevent thegeneration of the stress due to the difference of the coefficients ofthermal expansion of the sealing resin 25 and the transparent member 21.Therefore, it is possible to prevent the destruction of the solid-stateimage sensing device 80 and avoid the interference between the sealingresin 21 and the transparent member 25 so that reliability of thesolid-state image sensing device 80 can be improved. That is, the space102 functions the same as the shock-absorbing member 100.

On the other hand, a spacer 114 is provided between the transparentmember 21 and the solid-state image sensor 28 so that a space is formedbetween the transparent member 21 and the solid-state image sensor 28 bythe spacer 114. As a result of this, it is possible to obtain a lightcondensing effect of the micro lens 29 formed on the solid-state imagesensor 28 maximum by the air in the space.

In addition, it is possible to prevent the generation of the stressbased on the difference of the coefficients of thermal expansion of thetransparent member 21 and the solid-state image sensor 28 by forming thespacer 114 with the shock-absorbing members. As a result of this, it ispossible to avoid the interference between the sealing resin 21 and thesolid-state image sensor 28.

Next, a solid-state image sensing device of a fourth embodiment of thepresent invention is discussed with reference to FIG. 9. Here, FIG. 9 isa cross-sectional view of a solid-state image sensing device of thefourth embodiment of the present invention.

Referring to FIG. 9, in the solid-state image sensing device 90 of thefourth embodiment, a space 103 having a groove shape is provided betweenthe sealing resin 25 and the shock-absorbing member 100 provided at thecircumferential side surface (edge surface) of the transparent member21.

Because of the above-mentioned space 103, even if the temperature ischanged, it is possible to prevent the generation of the stress due tothe difference of the coefficients of thermal expansion of the sealingresin 25 and the transparent member 21. Therefore, it is possible toprevent the destruction of the solid-state image sensing device 80 andavoid the interference between the sealing resin 21 and the transparentmember 25 so that reliability of the solid-state image sensing device 80can be improved.

In this embodiment as well as the above-discussed first embodiment, whenthe shock-absorbing member 100 is provided on the externalcircumferential surface of the transparent member 21, a width (length inupper and lower directions in FIG. 7) of the shock-absorbing member 100is longer than the width (length in upper and lower directions in FIG.7) of the transparent member 21 and a designated amount of theshock-absorbing member 100 projects to a side of the solid-state imagesensor 28. As a result of this, it is possible to form a distance “a”between the transparent member 21 and the solid-state image sensor 28.

In addition, by the shock-absorbing member 100, it is possible to avoidthe deformation of an image sensor side (lower side) of the transparentmember 21 due to the difference of the coefficients of thermal expansionof the solid-state image sensor 28 and the transparent member 21 or thedestruction of the transparent member 21 due to the stress from thesolid-state image sensor 28.

Next, a solid-state image sensing device of a fifth embodiment of thepresent invention is discussed with reference to FIG. 10. Here, FIG. 10is a cross-sectional view of a solid-state image sensing device of thefifth embodiment of the present invention.

Referring to FIG. 10, in the solid-state image sensing device 120 of thefourth embodiment, an external circumferential side surface of thetransparent member 210 is tilted upward toward the center of thetransparent member 210. In addition, the shock-absorbing member 100 isprovided along the inclination of the transparent member 210 between thesealing resin 25 and the transparent member 210.

Accordingly, the sealing resin 25 and the transparent member 210 arefixed to each other via the shock-absorbing member 100. The externalcircumferential side surface of the transparent member 210 is coveredwith the sealing resin 25 via the shock-absorbing member 100. In otherwords, the sealing resin 25 covers the external circumferential sidesurface of the transparent member 210 from an oblique upward side of thetransparent member 210.

Therefore, even if pressure is applied to the transparent member 210, itis possible to avoid the transparent member 210 coming out from adesignated position. In addition, even if the transparent member 210receives the stress from the sealing resin 25, it is difficult for thetransparent member 210 to be broken. Hence, the reliability of thesolid-state image sensing device 120 can be improved.

Furthermore, as discussed above, the external circumferential sidesurface of the transparent member 210 is tilted upward toward the centerof the transparent member 210, and the shock-absorbing member 100 isprovided on the circumferential side surface (edge surface) of thetransparent member 210 along the inclination of the transparent member210. Accordingly, a wide space is formed above the electrode part of thewiring board 24 and the solid-state image sensor 28.

Therefore, in assembly of the solid-state image sensing apparatus 120,when the electrode of the solid-state image sensor 28 and the electrodeof the wiring board 24 are connected by the bonding wire 27, it ispossible to prevent the contact of a bonding capillary and thecircumferential side surface (edge surface) of the transparent member210 so that the bonding process can be implemented properly andefficiently.

Next, a solid-state image sensing device of a sixth embodiment of thepresent invention is discussed with reference to FIG. 11. Here, FIG. 11is a cross-sectional view of a solid-state image sensing device of thesixth embodiment of the present invention.

Referring to FIG. 11, in the solid-state image sensing device 130 of thefourth embodiment, the shock-absorbing member 100 is provided, forexample, between the sealing resin 25 and the transparent member 21,that is, between the sealing resin 25 and the external circumferentialside surface of the transparent member 21. In addition, a spacer 110 isprovided in an area where the micro lens 29 is not provided of an uppersurface of the solid-state image sensor 28, in a light receiving areadirection of the solid-image sensor 28 from a projection part of theshock-absorbing member 100.

Under the above-mentioned structure, a surface process is performed onboth surfaces of the transparent member 21. A covering film 125 such asan infrared (IR) filter, a low pass filter, or an anti-reflection film(AR coating film) is formed on a main surface (a light transmissionsurface).

It is possible to improve the permeability of the transparent member 21by providing the covering film 125 on the surface of the transparentmember 21, so that an optical property of the solid-state image sensor130 can be improved.

[Manufacturing Method of Semiconductor Device]

Next, a manufacturing method of the above-discussed solid-state imagesensing device as an example of a manufacturing method of asemiconductor device of the present invention is discussed.

First, a manufacturing method of the solid-state image sensing device 20shown in FIG. 2 is discussed as a seventh embodiment of the presentinvention with reference to FIG. 12 through FIG. 19. Here, FIG. 12through FIG. 19 are views (part 1 through part 8) for explaining amanufacturing method of the solid-state image sensing device shown inFIG. 2, of the seventh embodiment of the present invention.

Referring to FIG. 12-(A), a cutting process using a first cutting blade145 having a cutting edge thickness “e” is applied to a transparentplate adhered on the main surface of a dicing tape 140 and the dicingtape 140, so that the transparent member is divided into pluraltransparent members 21 by a piercing hole 141 and plural grooves 148 areformed in the dicing tape 140.

FIG. 12-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 12-(A).

An ultraviolet curing type adhesive tape may be used as the dicing tape140, so that an adhesive force is reduced by irradiation of theultraviolet rays.

The transparent plate is pierced and cut by the first cutting blade 145such as a diamond blade (diamond saw) rotated at high speed so that thepiercing hole 141 is formed. In addition, the dicing tape 140 is cut toa depth “a” between the transparent member 21 and the solid-state imagesensor 28 shown in FIG. 2, namely a height “a” of the space formedbetween the transparent member 21 and the solid-state image sensor 28,so that the groove 148 is formed.

The transparent member 21 is, for example, made of a glass plate. Thetransparent plate is cut by the first cutting blade 145 so that thetransparent member 21 has a configuration and an area corresponding to alight receiving area of the solid-state image sensor as a semiconductorelement.

In a case where a plan configuration of the transparent member 21 isrectangular-shaped, the transparent plate on the dicing tape is cut indirections crossing at right angles to each other, namely X directionand Y direction, by the cutting blade so that plural transparent members21 are separated in the X direction and Y direction.

The configuration of the transparent member 21 is selected ascorresponding to the configuration of the solid-state image sensor 28,the configuration of the light receiving area of the solid-state imagesensor 29, the way of use of the semiconductor device 20, or the like.Accordingly, the cutting configuration of the transparent member 21 isselected based on this.

Next, as shown in FIG. 13-(A), the piercing hole 141 and the groove 148are filled with a material of the shock-absorbing member 100(hereinafter “shock-absorbing part material”) 147.

At this time, a dam 142 is provided on the dicing tape 140 so as tosurround the arrangement of the transparent member 21 in advance andtherefore the shock-absorbing part material 147 is provided at thecircumferential side surface (edge surface) of the transparent member 21situated at the outermost of the arrangement of the transparent member21.

After that, the piercing hole 141 and the groove 148 are filled with theshock-absorbing part material 147. Details of the shock-absorbing partmaterial 147 are as discussed above.

FIG. 13-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 13-(A).

The piercing hole 141 and the groove 148 are filled with theshock-absorbing part material 147, and the shock-absorbing part material147 is cured. FIG. 14 shows this state. As shown in FIG. 14, at aninside of the dam 142, the surrounding area of the transparent members21 divided in plural is filled with the shock-absorbing part material147.

In the meantime, FIG. 13-(A) shows a state where the groove 148 is notformed at a surface side facing the dam 142 of the transparent member 21situated outermost. This is because it is assumed that the outermosttransparent member has a measurement or configuration not being used. Ifthe outermost transparent member has a measurement or configurationcapable of being used, groove 148 is formed at a surface side facing thedam 142 of the transparent member 21 situated outermost. This is appliedto other embodiment shown in FIG. 24, FIG. 30, FIG. 33, FIG. 37, FIG.43, or the like.

Next, in this embodiment, as shown in FIG. 15-(A), the shock-absorbingpart material 147 shown in FIG. 14 is cut by using a second cuttingblade 155 having a having a cutting edge thickness “m” less than thefirst cutting blade 145.

More specifically, as shown in FIG. 15-(B) being an enlarged view of apart surrounded by a dotted line in FIG. 15-(A), the shock-absorbingpart material 147 (see FIG. 14) with which the piercing hole 141 and thegroove 148 are filled is cut by using the second cutting blade 155, sothat the shock-absorbing member 100 is formed at the circumferentialside surface of the transparent member 21. At this time, the secondcutting blade 155 reaches inside of the dicing tape 140.

Next, as shown in FIG. 16, ultraviolet rays UV are irradiated from alower surface side of the dicing tape 140.

As a result of this, the adhesive force of the dicing tape 140 isreduced and therefore the transparent member 21 can b easily peeled offfrom the dicing tape 140. Thus, plural transparent members 21 havingstructures shown in FIG. 17 can be obtained.

FIG. 17-(A) is a plan view of the transparent member 21 obtained by theprocesses shown in FIG. 11 through FIG. 16. FIG. 17-(B) is across-sectional view taken along line X-X′ of FIG. 17-(A).

The circumferential side surface of the transparent member 21 is coveredwith the shock-absorbing member 100. The shock-absorbing member 100 hasa length (thickness) greater than a length (thickness) of thetransparent member 21 by a length (thickness) corresponding to theseparated length “a” (see FIG. 2) between the transparent member 21 andthe solid-state image sensor 28.

Next, as shown in FIG. 18, the transparent member 21 whosecircumferential side surface is covered with the shock-absorbing member100 is provided and fixed on the light receiving surface of thesolid-state image sensor 28 mounted on the wiring board 24. Thesolid-state image sensor 28 is fixed on the wiring board by the bondingmember 26 in advance.

The transparent member 21 is fixed on the light receiving surface of thesolid-state image sensor 28 by heating and melting a contact part of theshock-absorbing member 100 and the solid-state image sensor 28 or byapplying another epoxy group adhesive to the contact part.

While the transparent member 21 is provided on the solid-state imagesensor 28 in an example shown in FIG. 18, the present invention is notlimited to this. The transparent member 21 may be provided on the waferstate solid-state image sensor 28.

Next, as shown in FIG. 19, an electrode of the solid-state image sensor29 is connected to an. electrode on the wiring board 24 by the bondingwire 27.

After that, the solid-state image sensing device 20 is formed via asealing process using the sealing resin 25, a process for forming anoutside connection terminal on another main surface of the wiring board24, and a packing process using the sealing resin 25 (not shown).

According to the manufacturing method of the solid-state image sensingdevice 20 of this embodiment, the degree of freedom to set the lengthand width (thickness) of the shock-absorbing member 100 is high. Thatis, the width (thickness) of the shock-absorbing member 100 can beselected by changing a cut amount “a” of the dicing tape 140 by thefirst cutting blade 145 shown in FIG. 12 in the manufacturing process ofthe solid state image sensing device 20.

In addition, a covering thickness of the shock-absorbing member 100,that is, a thickness at which the external circumferential side surfaceof the transparent member 21 is covered, can be selected by changing acutting edge of the first cutting blade 145 cutting in the dicing tape140 and/or a cutting edge of the second cutting blade cutting off thedicing tape 140.

Furthermore, even if the configuration or the area of the lightreceiving area of the solid-state image sensor 28 is changed, it ispossible to easily correspond to this by changing a dicing condition,namely, a position where the transparent member 21 and the dicing tape140 are diced.

If the shock-absorbing member 100 is to be manufactured by using awell-known printing technique, it is necessary to form a printing mask.In addition, it is necessary to form a new printing mask whenever thesize of the solid-state image sensor is changed. This causes an increaseof the manufacturing cost.

According to the manufacturing method of the solid-state image sensingdevice 20 of this embodiment, it is possible to easily form the lightreceiving part proper for various kinds of solid-state image sensors bychanging the cutting blade 145 or 155 and/or the dicing condition.

Next, a manufacturing method of the solid-state image sensing device 40shown in FIG. 4 is discussed as a seventh embodiment of the presentinvention with reference to FIG. 20 through FIG. 28. Here, FIG. 20through FIG. 28 are views (part 1 through part 9) for explaining amanufacturing method of the solid-state image sensing device 40 shown inFIG. 4, of the seventh embodiment of the present invention.

Referring to FIG. 20-(A), the dicing tape 140 same as the tape used inthe above-discussed in the seventh embodiment is cut to a designateddepth by using a third cutting blade 165 having a cutting edge thickness“b” so that the groove forming parts 161 crossing in the X and Ydirections are formed.

FIG. 20-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 20-(A).

Here, a cutting depth of the dicing tape 140 by the third cutting blade165, namely depth of the groove 161, is the same as a height “a” of thespacer 110 provided between the transparent member 21 and thesolid-state image sensor 28, namely a height of a space formed betweenthe transparent member 21 and the solid-state image sensor 28.

Next, as shown in FIG. 21-(A), the transparent plate 200 is adhered onthe dicing tape 140 where the grooves 161 are formed so that the grooves161 are covered by the transparent plate 200.

FIG. 21-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 21-(A). By the transparent plate 200 being adhered onto the dicingtape 140, parts above the grooves 161 are covered with the dicing tape140 so that a closed space of the groove 161 is formed.

Next, as shown in FIG. 22-(A), the transparent plate 200 is cut, ascorresponding to the grooves 161, by using the fourth cutting blade 175whose cutting edge thickness “c” is less than the cutting edge thickness“b” of the third cutting blade 165.

FIG. 22-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 22-(A).

The transparent plate 200 shown in FIG. 21 is cut and separated by thefourth cutting blade 175 so that plural cutting members 21 are formed.In addition, the piercing holes 171 of the dicing tape 140 are formedabove the grooves 161.

Next, as shown in FIG. 23-(A), the groove 161 is filled with a spacermaterial 167 forming the spacer 110 and cured. As discussed above, forexample, an epoxy group adhesive or the like can be used as the spacermaterial 167.

FIG. 23-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 23-(A).

While the spacer material 167 fills the groove 161, the spacer material167 does not fill the piercing hole 171. In other words, a fillingamount of the spacer material 167 is selected so that the spacermaterial 167 fills to a height contacting a lower surface of thetransparent member 21.

Next, as shown in FIG. 24-(A), the dam 142 for filling the groove 171with the shock-absorbing part material 147 is provided on the dicingtape and around the arrangement of the transparent member 21. Afterthat, the piercing hole 171 is filled with the shock-absorbing partmaterial 147. Details of the shock-absorbing part material 147 are asdiscussed above.

FIG. 24-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 24-(A).

As shown in FIG. 24-(B), in the grooves 171, the shock-absorbing partmaterial 147 fills to a height the same as an upper surface of thetransparent member 21 and is cured.

FIG. 25 shows a state where the shock-absorbing part material 147 fillsin the grooves 171. In a surface area of the dicing tape defined by thedam 142, the surrounding area of the transparent members 21 separated inX and Y directions are covered with the shock-absorbing part material147 filling in the groove 171.

Next, as shown in FIG. 26-(A), the shock-absorbing part material 147 andthe spacer member 167 are cut by using the fifth cutting blade 185 whosecutting edge thickness “d” is less than the cutting edge thickness “c”of the fourth cutting blade 175.

FIG. 26-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 26-(A).

A cutting process using the fifth cutting blade 185 is implemented sothat the shock-absorbing part material 147 filling in the piercing hole171 is pierced, the spacer material 167 filling in the groove 161 ispierced, and the dicing tape 140 is cut.

By such a cutting process, the shock-absorbing member 100 is formed onthe circumferential side surface of the transparent member 21 and thespacer 11 continuing from the shock-absorbing member 100 is formed.

Next, as shown in FIG. 27, ultraviolet rays UV are irradiated from alower surface side of the dicing tape 140.

As a result of this, the adhesive force of the dicing tape 140 isreduced and therefore the transparent member 21 can b easily peeled offfrom the dicing tape 140. Thus, plural transparent members 21 havingstructures shown in FIG. 17 can be obtained.

Next, as shown in FIG. 28, the circumferential side surface (edgesurface) of the transparent member 21 is covered with theshock-absorbing member 100, and a spacer 111 having a thickness “a” isprovided on a circumferential edge part of another main surface of thetransparent member 21.

Next, as discussed in the seventh embodiment with reference to FIG. 18,the transparent member 21 is provided and fixed on the light receivingsurface of the solid-state image sensor 28 by heating and melting acontact part of the spacer 111 and the solid-state image sensor 28 or byapplying another epoxy group adhesive to the contact part.

Next, as discussed in the seventh embodiment with reference to FIG. 19,an electrode of the solid-state image sensor 29 is connected to anelectrode on the wiring board 24 by the bonding wire 27.

After that, the solid-state image sensing device 40 is formed via asealing process using the sealing resin 25, a process for forming anoutside connection terminal on another main surface of the wiring board24, and a packing process using the sealing resin 25 (not shown).

According to the manufacturing method of the solid-state image sensingdevice 40 of this embodiment, as well as the manufacturing method of thesolid-state image sensing device 20 of the seventh embodiment of thepresent invention, the height of the spacer 111 can be selected bychanging a dicing condition, namely a cut amount “a” of the dicing tape140 by the third cutting blade 165 shown in FIG. 20 in the manufacturingprocess of the solid state image sensing device 40.

In addition, thickness of the shock-absorbing member 100 and the spacer111 can be selected by changing a cutting edge of the fifth cuttingblade 185 shown in FIG. 26.

Furthermore, even if the size of the solid-state image sensor 28 ischanged, it is possible to easily correspond to this by changing adicing condition, namely, a cutting length or a cutting position wherethe transparent member 21 and the dicing tape 140 are diced by using thefourth cutting blade 175 shown in FIG. 22.

Thus, according to the manufacturing method of the solid-state imagesensing device 40 of this embodiment, it is possible to easily form theshock-absorbing member and the transparent member having the spacerproper for various kinds of solid-state image sensors at low cost bychanging the cutting blade and/or the dicing condition.

In the meantime, in the solid-state image sensing device 40 shown inFIG. 4, the shock-absorbing member 100 is provided between the sealingresin 25 and the circumferential side surface (edge surface) of thetransparent member 21, and the spacer 111 is provided on the uppersurface of the solid-state image sensor 28. On the other hand, in thesolid-state image sensing device 60 shown in FIG. 6, the shock-absorbingmember having a Young's modulus different from the Young's modulus ofthe shock-absorbing member 100 provided between the sealing resin 25 andthe circumferential side surface (edge surface) of the transparentmember 21 is provided as the spacer 113 between the transparent member21 and the solid-state image sensor 20.

Therefore, it is possible to form the solid-state image sensing device70 shown in FIG. 6 by implementing the manufacturing method of theseventh embodiment of the present invention wherein the material havingthe Young's modulus different from the Young's modulus of theshock-absorbing member 100 is used as a material of the spacer 113instead of the spacer material 167 being a material of the spacer 110.

Next, a manufacturing method of the solid-state image sensing device 30shown in FIG. 3 is discussed as a ninth embodiment of the presentinvention with reference to FIG. 20 through FIG. 23 and FIG. 29 throughFIG. 32.

For manufacturing the solid-state image sensing device 30, in thisembodiment, the processes discussed with reference to FIG. 20 throughFIG. 23 are implemented.

That is, as shown in FIG. 20-(A), the dicing tape 140 is cut at adesignated depth by using the third cutting blade 165 having the cuttingedge thickness “b” so that plural groove forming parts 161 are formed.

FIG. 20-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 20-(A).

Here, the cutting depth of the dicing tape 140 by the third cuttingblade 165, namely depth of the groove 161, is the same as a height “a”of the spacer 110 provided between the transparent member 21 and thesolid-state image sensor 28, namely a height of a space formed betweenthe transparent member 21 and the solid-state image sensor 28.

Next, as shown in FIG. 21-(A), the transparent plate 200 is adhered onthe dicing tape 140 where the grooves 161 are formed so that the grooves161 are covered by the transparent plate 200.

FIG. 21-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 21-(A). By adhering the transparent plate 200 on the dicing tape140, a part above the grooves 161 are covered with the dicing tape 140so that a closed space of the groove 161 is formed.

Next, as shown in FIG. 22-(A), the transparent plate 200 is cut, ascorresponding to the grooves 161, by using the fourth cutting blade 175whose cutting edge thickness “c” is less than the cutting edge thickness“b” of the third cutting blade 165.

FIG. 22-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 22-(A).

The transparent plate 200 shown in FIG. 21 is cut and separated by thefourth cutting blade 175 so that plural cutting members 21 are formed.In addition, the piercing holes 171 of the dicing tape 140 are formedabove the grooves 161.

Next, as shown in FIG. 23-(A), the groove 161 is filled with a spacermaterial 167 forming the spacer 110 and cured. As discussed above, forexample, an epoxy group adhesive or the like can be used as the spacermaterial 167.

FIG. 23-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 23-(A).

While the spacer material 167 fills the groove 161, the spacer material167 does not fill the piercing hole 171. In other words, a fillingamount of the spacer material 167 is selected so that the spacermaterial 167 fills to height contacting a lower surface of thetransparent member 21.

Next, in this embodiment, as shown in FIG. 29-(A), the piercing hole 171is pierced again by the fourth cutting blade 175 shown in FIG. 22 sothat the spacer material filling in the groove 161 is cut.

FIG. 29-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 29-(A). A cutting process is implemented so as to reach the bottomsurface of the groove 161 situated in the dicing tape 140, so that thespacer material 167 is cut and separated as corresponding to each of thetransparent member 21.

As a result of this, a groove having a width of “c” the same as thewidth of the piercing hole 171 is formed in the groove 161 having awidth of “b” and the spacer material 167 is provided on the innersurface of the groove. The spacer material 167 is positioned in thevicinity of the external circumferential part of the transparent member21 at the other main surface of the transparent member 21.

Next, as shown in FIG. 30-(A), the dam 142 for filling the groove 171with the shock-absorbing part material 147 is provided on the dicingtape 140 and around of the arrangement of the transparent member 21.

After that, the piercing part 171 is filled with the shock-absorbingpart material 147. The details of the shock-absorbing part material 147are as discussed above.

FIG. 30-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 30-(A).

That is, the shock-absorbing part material 147 fills in the piercingpart 171 and the groove 161 and is cured. At this time, in the groove161, the spacer 110 made of the spacer material 167 comes in contactwith the circumference of the shock-absorbing part material 147.

Next, as shown in FIG. 31-(A), the shock-absorbing part material 147filling in the piercing hole 171 and the groove 161 are cut by using thefifth cutting blade 185 shown in FIG. 29 whose cutting edge thickness“d” is less than the cutting edge thickness “c” of the fourth cuttingblade 175.

FIG. 31-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 31-(A).

The cutting process whereby the shock-absorbing part material 147filling in the piercing hole 171 and the groove 161 is pierced and thedicing tape 140 is cut is implemented. As a result of this, the spacermaterial 167 filling in the groove 161 forms the spacer 110.

Next, as shown in FIG. 27, ultraviolet rays UV are irradiated from alower surface side of the dicing tape 140.

As a result of this, the adhesive force of the dicing tape 140 isreduced and therefore the transparent member 21 can be easily peeled offfrom the dicing tape 140. Thus, plural transparent members 21 havingstructures shown in FIG. 32 can be obtained.

Next, as shown in FIG. 32, the circumferential side surface (edgesurface) of the transparent member 21 is covered with theshock-absorbing member 100, and a spacer 111 having a thickness “a” andan extending part (wide width part) of the shock-absorbing member 100are provided on a circumferential edge part of another main surface ofthe transparent member 21.

Next, as discussed in the seventh embodiment with reference to FIG. 18,the transparent member 21 is provided and fixed on the light receivingsurface of the solid-state image sensor 28 by heating and melting acontact part of the spacer 111 and the solid-state image sensor 28 or byapplying another epoxy group adhesive to the contact part.

Next, as discussed in the seventh embodiment with reference to FIG. 19,an electrode of the solid-state image sensor 29 is connected to anelectrode on the wiring board 24 by the bonding wire 27.

After that, the solid-state image sensing device 30 is formed via asealing process using the sealing resin 25, a process for forming anoutside connection terminal on another main surface of the wiring board24, and a packing process using the sealing resin 25 (not shown).

According to the manufacturing method of this embodiment, it is possibleto achieve the same effect as the seventh and eighth embodiments.

Next, a manufacturing method of the solid-state image sensing device 50shown in FIG. 5 is discussed as a tenth embodiment of the presentinvention with reference to FIG. 20 through FIG. 25 and FIG. 33 throughFIG. 35.

In the solid-state image sensing device 50 shown in FIG. 5, theshock-absorbing member having a Young's modulus the same as the Young'smodulus of the shock-absorbing member 101 provided between the sealingresin 25 and the circumferential side surface (edge surface) of thetransparent member 21 is provided as the spacer between the transparentmember 21 and the sealing resin 25.

For manufacturing the solid-state image sensing device 50, in thisembodiment, the processes discussed with reference to FIG. 20 throughFIG. 22 are implemented.

That is, as shown in FIG. 20-(A), the dicing tape 140 is cut at adesignated depth by using the third cutting blade 165 having the cuttingedge thickness “b” so that plural groove forming parts 161 are formed.

FIG. 20-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 20-(A).

Here, the cutting depth of the dicing tape 140 by the third cuttingblade 165, namely depth of the groove 161, is the same as a height “a”of the spacer 110 provided between the transparent member 21 and thesolid-state image sensor 28, namely a height of a space formed betweenthe transparent member 21 and the solid-state image sensor 28.

Next, as shown in FIG. 21-(A), the transparent plate 200 is adhered onthe dicing tape 140 where the grooves 161 are formed so that the grooves161 are covered by the transparent plate 200.

FIG. 21-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 21-(A). By adhering the transparent plate 200 on the dicing tape140, a part above the grooves 161 are covered with the dicing tape 140so that a closed space of the grooves 161 is formed.

Next, as shown in FIG. 22-(A), the transparent plate 200 is cut, ascorresponding to the grooves 161, by using the fourth cutting blade 175whose cutting edge thickness “c” is less than the cutting edge thickness“b” of the third cutting blade 165.

FIG. 22-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 22-(A).

The transparent plate 200 shown in FIG. 21 is cut and separated by thefourth cutting blade 175 so that plural cutting members 21 are formed.In addition, the piercing holes 171 of the dicing tape 140 are formedabove the grooves 161.

Next, as shown in FIG. 33-(A), a dam 142 for being filled with theshock-absorbing part material 147 is provided on the dicing tape 140 soas to surround the arrangement of the transparent member 21.

After that, the groove 161 and the piercing hole 141 are concurrently(continuously) filled with the shock-absorbing part material 171 and theshock-absorbing part material 171 is cured.

FIG. 33-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 33-(A).

The shock-absorbing part material 171 fills the piercing hole 171 andthe groove 161 so as to reach the upper surface of the piercing hole171, namely at a height the same as the upper surface of the transparentmember 21.

Next, as shown in FIG. 34-(A), the shock-absorbing part material 147 iscut by using the fifth cutting blade 185 whose cutting edge thickness“d” is less than the cutting edge thickness “c” of the fourth cuttingblade 175.

FIG. 34-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 34-(A).

A cutting process using the fifth cutting blade 185 is implemented sothat the shock-absorbing part material 147 filling in the piercing hole171 and the groove 161 is pierced and the dicing tape 140 is cut.

As a result of this, the spacer material 167 filling in the groove 161forms the shock-absorbing member 100 situated on the side surfacecircumference of the transparent member 21 and forms the spacer situatedon another main surface of the transparent member 21.

Next, ultraviolet rays UV are irradiated from a lower surface side ofthe dicing tape 140.

As a result of this, the adhesive force of the dicing tape 140 isreduced and therefore the transparent member 21 can be easily peeled offfrom the dicing tape 140. Thus, plural transparent members 21 havingstructures shown in FIG. 35 can be obtained.

As shown in FIG. 35, the circumferential side surface (edge surface) ofthe transparent member 21 is covered with the shock-absorbing member100, and a spacer 112 having a thickness “a” and an extending part (widewidth part) of the shock-absorbing member 100 are provided on acircumferential edge part of another main surface of the transparentmember 21. The shock-absorbing member 100 and the spacer 112 are formedin a body.

Next, as discussed in the seventh embodiment with reference to FIG. 18,the transparent member 21 is provided and fixed on the light receivingsurface of the solid-state image sensor 28 by heating and melting acontact part of the spacer 111 and the solid-state image sensor 28 or byapplying another epoxy group adhesive to the contact part.

Next, as discussed in the seventh embodiment with reference to FIG. 19,an electrode of the solid-state image sensor 29 is connected to anelectrode on the wiring board 24 by the bonding wire 27.

After that, the solid-state image sensing device 50 shown in FIG. 5 isformed via a sealing process using the sealing resin 25, a process forforming an outside connection terminal on another main surface of thewiring board 24, and a packing process using the sealing resin 25 (notshown).

According to the manufacturing method of this embodiment, theshock-absorbing member 100 provided between the circumferential sidesurface (edge surface) of the transparent member 21 and the sealingresin 25 and the spacer 112 provided between the transparent member 21and the solid-state image sensor 20 are made of the same material andformed in a body. Therefore, it is possible to reduce the number ofprocesses and the cost for manufacturing the solid-state image sensingdevice 50.

Next, a manufacturing method of the solid-state image sensing device 70shown in FIG. 7 is discussed as an eleventh embodiment of the presentinvention with reference to FIG. 12, FIG. 13, and FIG. 36 through FIG.39.

In the solid-state image sensing device 70, the first shock-absorbingmember 100 and the second shock-absorbing member 101 whose Young'smodulus is different from that of the first shock-absorbing member 100are between the sealing resin 25 and a circumferential side surface(edge surface) of the transparent member 21.

Referring to FIG. 12-(A), a cutting process using a first cutting blade145 having a cutting edge thickness “e” is applied to a transparentplate adhered on the main surface of a dicing tape 140 and the dicingtape 140, so that the transparent member is divided into pluraltransparent members 21 by piercing holes 141 and plural grooves 148 areformed in the dicing tape 140.

FIG. 12-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 12-(A).

The transparent plate is pierced and cut by the first cutting blade 145such as a diamond blade (diamond saw) rotated at high speed so that thepiercing hole 141 is formed. In addition, the dicing tape 140 is cut toa separate depth “a” between the transparent member 21 and thesolid-state image sensor 28 shown in FIG. 2, namely a height “a” of thespace formed between the transparent member 21 and the solid-state imagesensor 28, so that the groove 148 is formed.

Next, as shown in FIG. 13-(A), the piercing hole 141 and the groove 148are filled with a material of the shock-absorbing member 100(hereinafter “shock-absorbing part material”) 147.

At this time, a dam 142 is provided on the dicing tape 140 so as tosurround the arrangement of the transparent member 21 in advance andtherefore the shock-absorbing part material 147 is provided at thecircumferential side surface (edge surface) of the transparent member 21situated at the outermost of the arrangement of the transparent member21.

After that, the piercing hole 141 and the groove 148 are filled with theshock-absorbing part material 147. Details of the shock-absorbing partmaterial 147 are as discussed above.

FIG. 13-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 13-(A).

Next, as shown in FIG. 36-(A), the shock-absorbing part material 147filling in the groove 141 is cut by using the sixth cutting blade 235whose cutting edge thickness “f” is less than the cutting edge thicknessof the first cutting blade 145.

FIG. 36-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 36-(A).

As shown in FIG. 36-(B), the circumferential side surface (edge surface)of the transparent member 21 and the inside surface of the groove 148formed in the dicing tape 140 are covered with the first shock-absorbingpart material 100. A second groove 190 having a width “f” is formedbetween the first shock-absorbing part materials 100 neighboring eachother.

Next, as shown in FIG. 37-(A), the second groove 190 is filled with amaterial of the second shock-absorbing member (hereinafter “secondshock-absorbing part material”) 197.

FIG. 37-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 37-(A).

The second shock-absorbing part material 197 filling in the secondgroove 190 is cured. Details of the shock-absorbing part material 147and second shock-absorbing part material 197 are as discussed above.

Next, as shown in FIG. 38-(A), the second shock-absorbing part material197 is cut by using the seventh cutting blade 195 whose cutting edgethickness “g” is less than the cutting edge thickness of the sixthcutting blade 235.

FIG. 38-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 38-(A).

A cutting process using the seventh cutting blade 195 is implemented sothat the second shock-absorbing part material 197 filling in the secondgroove 195 is pierced and the dicing tape 140 is cut, and thereby thesecond shock-absorbing part 101 is formed.

Next, ultraviolet rays UV are irradiated from a lower surface side ofthe dicing tape 140.

As a result of this, the adhesive force of the dicing tape 140 isreduced and therefore the transparent member 21 can be easily peeled offfrom the dicing tape 140. Thus, plural transparent members 21 havingstructures shown in FIG. 39 can be obtained.

As shown in FIG. 39, the circumferential side surface (edge surface) ofthe transparent member 21 is covered with the first shock-absorbingmember 100 and the second shock-absorbing member 101, and a doubleextending part (wide width part) having thickness “a” of theshock-absorbing members 100 and 101 are provided on a circumferentialedge part of another main surface of the transparent member 21.

Next, as discussed in the seventh embodiment with reference to FIG. 18,the transparent member 21 is provided and fixed on the light receivingsurface of the solid-state image sensor 28 by heating and melting acontact part of the spacer 111 and the solid-state image sensor 28 or byapplying another epoxy group adhesive to the contact part.

Next, as discussed in the seventh embodiment with reference to FIG. 19,an electrode of the solid-state image sensor 29 is connected to anelectrode on the wiring board 24 by the bonding wire 27.

After that, the solid-state image sensing device 50 shown in FIG. 5 isformed via a sealing process using the sealing resin 25, a process forforming an outside connection terminal on another main surface of thewiring board 24, and a packing process using the sealing resin 25 (notshown).

According to the manufacturing method of this embodiment, it is possibleto obtain the same effect as the above-discussed other embodiments.

Next, a manufacturing method of the solid-state image sensing device 80shown in FIG. 8 is discussed as a twelfth embodiment of the presentinvention with reference to FIG. 40.

In the solid-state image sensing device 80 shown in FIG. 8, theshock-absorbing member 100 is not provided between the sealing resin 25and the circumferential side surface (edge surface) of the transparentmember 21. Instead, a groove-shaped air space 102 is formed along thecircumferential side surface (edge surface) of the transparent member 21between the sealing resin 25 and the circumferential side surface (edgesurface) of the transparent member 21.

The manufacturing method of the solid-state image sensing device 80 is amodified method of the manufacturing method of the solid-state imagesensing device 40 that is the eighth embodiment of the presentinvention.

In the eighth embodiment, in the process shown in FIG. 24, the piercinghole is filled with the shock-absorbing part material 147. On the otherhand, in the twelfth embodiment, as shown in FIG. 40-(A), the piercinghole 171 is filled with the resist 300 and the resist 300 is cured.Other than this process, the same processes as the processes of theeighth embodiment are applied.

After the packing process using the sealing resin 25, the resist 300 isremoved by a solvent. As a result of this, as shown in FIG. 40-(B), thegroove-shaped air space 102 is formed between the sealing resin 25 andthe circumferential side surface (edge surface) of the transparentmember 21.

According to the manufacturing method of this embodiment, it is possibleto form the solid-state image sensing device 80 at low cost by using thecutting blades having different cutting edge widths and/or changing thedicing condition.

It is also possible to easily form the air space 102 between thecircumferential side surface (edge surface) of the transparent member 21and the sealing resin 25 by removing the resist 300 filling in thepiercing hole 171.

Next, a manufacturing method of the solid-state image sensing device 90shown in FIG. 9 is discussed as a thirteenth embodiment of the presentinvention with reference to FIG. 41.

In the solid-state image sensing device 90 shown in FIG. 9, the secondshock-absorbing part material 102 provided in the solid-state imagesensing device 70 shown in FIG. 7 is not provided. Instead,groove-shaped air space 103 is formed between the sealing resin 25 andthe shock-absorbing part material 100.

The manufacturing method of the solid-state image sensing device 90 is amodified method of the manufacturing method of the solid-state imagesensing device 70 that is the eleventh embodiment of the presentinvention.

In the eleventh embodiment, after the processes shown in FIG. 12, FIG.13 and FIG. 36, in the process shown in FIG. 37-(A), the second groove190 is filled with the shock-absorbing part material 197 being amaterial of the second shock-absorbing member 102.

In this embodiment, as shown in FIG. 41-(A), instead of theshock-absorbing part material 197, a resist fills in the second groove190 and is cured. Other than this process, the same processes as theprocesses of the eleventh embodiment are applied.

After the packing process using the sealing resin 25, the resist 301 isremoved by a solvent. As a result of this, as shown in FIG. 41-(B), theair space 103 is formed between the sealing resin 25 and theshock-absorbing part material 100 provided on the circumferential sidesurface (edge surface) of the transparent member 21.

According to the manufacturing method of this embodiment, it is possibleto form the solid-state image sensing device 90 at low cost by using thecutting blades having different cutting edge widths and/or changing thedicing condition.

It is also possible to easily form the air space 103 between the sealingresin 25 and the shock-absorbing part material 100 provided on thecircumferential side surface (edge surface) of the transparent member 21by removing the resist 301 filling in the piercing hole 171.

Next, a manufacturing method of the solid-state image sensing device 120shown in FIG. 10 is discussed as a fourteenth embodiment of the presentinvention with reference to FIG. 42 through FIG. 46.

In the solid-state image sensing device 120 shown in FIG. 10, anexternal circumferential side surface of the transparent member 210 istilted upward toward the center of the transparent member 210. Inaddition, the shock-absorbing member 100 is provided along theinclination of the transparent member 210 between the sealing resin 25and the transparent member 210.

Referring to FIG. 42-(A), in this embodiment, a transparent plate, whichis adhered on the dicing tape 140, and the dicing tape 140 are cut bythe first dicing blade at a designated depth so that plural transparentmembers 210 are formed. As a result of this, the grooves 148 reachinginto the dicing tape 140 are formed at the circumference of thetransparent members 210.

When the transparent member 210 is formed, before or after cutting bythe first cutting blade, the transparent member 210 is cut ascorresponding to the groove 148 by using another cutting blade (notshown) wherein the cutting surface is an inclination surface (taper), sothat a taper part 211 is formed on the circumferential side surface(edge surface) of the transparent member 210. The depth of the taperpart 211 does not reach from the surface to the bottom surface of thetransparent member 210. A cutting part by the cutting blade 145 isformed at a lower part of the transparent member 210, namely in thevicinity of the dicing tape 140.

In the meantime, FIG. 42-(A) shows a state where the taper is not formedat the external circumferential part of the transparent member situatedat an outermost past of the arrangement of the transparent members 210.However, as discussed above, if the outermost transparent member has ameasurement or configuration capable for being used, a taper is formedat the external circumferential part of the transparent member situatedat an outermost past of the arrangement of the transparent members 210.

FIG. 42-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 42-(A).

The transparent plate is pierced and cut by the first cutting blade 145so that the piercing hole 215 is formed. In addition, the dicing tape140 is cut at a separate distance “a” between the transparent member 210and the solid-state image sensor 28 shown in FIG. 10, namely a height“a” of the space formed between the transparent member 210 and thesolid-state image sensor 28, so that the groove 148 is formed.

As discussed above, since the taper 211 is formed on the circumferentialside surface (edge surface) of the transparent member 210, an upper partof the piercing hole 215 is opened larger than a lower part of thepiercing hole 215.

Next, as shown in FIG. 43-(A), a dam 142 is provided on the dicing tape140 so as to surround the arrangement of the transparent members 210 inadvance. After that, the piercing hole 215 and the groove 148 are filledwith the shock-absorbing part material 147.

FIG. 43-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 43-(A).

The shock-absorbing part material 147 fills in the piercing hole 215 andthe groove 148 at a height the same as an upper surface of thetransparent member 210 and is cured.

Next, as shown in FIG. 44-(A), the surface part of the shock-absorbingpart material 147 is cut by an eighth cutting blade 255 wherein acutting edge thickness (width) of the eighth cutting blade 225 issmaller than that of the first cutting blade 145 and a taper having thesame inclination angle as the taper part 211 of the transparent member210 is formed at a head end of the eighth cutting blade 225.

FIG. 44-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 44-(A).

As a result of the above-mentioned cutting by the eighth cutting blade255, a V-shaped taper groove 212 is formed in the substantially centerin the upper part of the shock-absorbing part material 147.

Next, as shown in FIG. 45-(A), the shock-absorbing part material 147 iscut by using the second cutting blade 155 whose cutting edge thicknessis less than the cutting edge thickness of the first cutting blade 145.

FIG. 45-(B) is an enlarged view of a part surrounded by a dotted line inFIG. 45-(A).

A cutting process using the second cutting blade 155 is implemented sothat the shock-absorbing part material 147 (See FIG. 44) filling in thegroove 141 is pierced and the dicing tape 140 is cut.

Next, ultraviolet rays UV are irradiated from a lower surface side ofthe dicing tape 140.

As a result of this, the adhesive force of the dicing tape 140 isreduced and therefore the transparent member 21 can be easily peeled offfrom the dicing tape 140. Thus, plural transparent members 210 havingstructures shown in FIG. 46 can be obtained.

Next, as shown in FIG. 46, the circumferential side surface (edgesurface) including the inclination surface of the transparent member 210is covered with the shock-absorbing member 104, and an extending part(wide width part) of the shock-absorbing member 104 is provided on acircumferential edge part of another main surface of the transparentmember 21.

Next, as discussed in the seventh embodiment with reference to FIG. 18,the transparent member 210 is provided and fixed on the light receivingsurface of the solid-state image sensor 28 by heating and melting acontact part of the spacer 111 and the solid-state image sensor 28 or byapplying another epoxy group adhesive to the contact part.

Next, as discussed in the seventh embodiment with reference to FIG. 19,an electrode of the solid-state image sensor 29 is connected to anelectrode on the wiring board 24 by the bonding wire 27.

After that, the solid-state image sensing device 70 shown in FIG. 7 isformed via a sealing process using the sealing resin 25, a process forforming an outside connection terminal on another main surface of thewiring board 24, and a packing process using the sealing resin 25 (notshown).

According to the manufacturing method of this embodiment, it is possibleto form the solid-state image sensing device 120 at low cost by usingthe cutting blades having different cutting edge widths and/or changingthe dicing condition.

Furthermore, it is-possible to form the shock-absorbing member 104 alongthe circumferential side surface (edge surface) of the transparentmember 210 by using the cutting blade wherein an inclination (taper) isformed at the head end.

According to the manufacturing method of this embodiment, it is possibleto achieve the same effect as the above-discussed embodiments.

The present invention is not limited to these embodiments, butvariations and modifications may be made without departing from thescope of the present invention.

For example, materials of the transparent member 21 or 210 and thesolid-state image sensor 28 may be selected so that the coefficient ofthermal expansion of the transparent member 21 or 210 is the same as thecoefficient of thermal expansion of the solid-state image sensor 28. Ina case where the spacer 110 provided between the transparent member 21or 210 and the solid-state image sensor 28 is made of, for example, anadhesive, if the coefficient of thermal expansion of the transparentmember 21 or 210 is different from the coefficient of thermal expansionof the solid-state image sensor 28, stress is concentrated on theadhesive, namely the spacer 110, so that the adhesive may be peeled off.However, it is possible to prevent the stress from being generated bymaking the coefficient of thermal expansion of the transparent member 21or 210 equal to the coefficient of thermal expansion of the solid-stateimage sensor 28.

In addition, in the above-discussed embodiments, the solid-state imagesensing device is explained as an example of the semiconductor device ofthe present invention, and the solid-state image sensor is explained asan example of the semiconductor element forming the semiconductor deviceof the present invention. However, the present invention is not limitedto this.

The semiconductor element is not limited to the solid-state image sensorsuch as an image sensor but may be, for example, a fingerprint sensorusing glass.

Furthermore, as long as a semiconductor device is packaged or forms amodule by sealing the semiconductor element by using the sealing resin,the semiconductor device is not limited to the semiconductor devices ofthe above-mentioned embodiments. For example, the present invention canbe applied to a semiconductor device such as an optical module orErasable Programmable Read Only Memory (EPROM).

This patent application is based on Japanese Priority Patent ApplicationNo. 2005-330499 filed on Nov. 15, 2005, the entire contents of which arehereby incorporated by reference.

1. A semiconductor device, comprising: a semiconductor element; atransparent member separated from the semiconductor element by adesignated length and facing the semiconductor element; a sealing membersealing an edge surface of the transparent member and an edge part ofthe semiconductor element; and a shock-absorbing member provided betweenthe edge surface of the transparent member and the sealing member andeasing a stress which the transparent member receives from the sealingmember or the semiconductor element.
 2. The semiconductor device asclaimed in claim 1, further comprising: an air part forming part putbetween the transparent member and the semiconductor element and formingan air part between the transparent member and the semiconductorelement; wherein a Young's modulus of a material forming theshock-absorbing member is different from a Young's modulus of a materialforming the air part forming part.
 3. The semiconductor device asclaimed in claim 1, further comprising: an air part forming part putbetween the transparent member and the semiconductor element and formingan air part between the transparent member and the semiconductorelement; wherein a Young's modulus of a material forming theshock-absorbing member is the same as a Young's modulus of a materialforming the air part forming part.
 4. The semiconductor device asclaimed in claim 1, wherein the shock-absorbing member is provided alongthe edge surface of the transparent member and tilted upward toward to acenter of the transparent member.
 5. The semiconductor device as claimedin claim 1, wherein the shock-absorbing member is made of plural kindsof materials whose Young's moduli are different.
 6. The semiconductordevice as claimed in claim 1, wherein the shock-absorbing memberincludes an elastic body.
 7. The semiconductor device as claimed inclaim 1, wherein the shock-absorbing member is formed by an air spaceseparating the transparent member and the sealing member.
 8. Thesemiconductor device as claimed in claim 1, wherein a coefficient ofthermal expansion of a material forming the transparent member is thesame as a coefficient of thermal expansion of a material forming thesemiconductor element.
 9. The semiconductor device as claimed in claim1, wherein a coating film is applied on a surface of the transparentmember.
 10. A manufacturing method of a semiconductor device, thesemiconductor device including a semiconductor element and a transparentmember separated from the semiconductor element by a designated lengthand facing the semiconductor element, the manufacturing methodcomprising the steps of: a) forming a piercing part in the transparentmember adhered on an adhesive tape and forming a groove by cutting apart of the adhesive tape corresponding to the piercing part; b) fillingin the piercing part and the groove with a material of a shock-absorbingpart configured to ease a stress in the transparent member, and curingthe material of the shock-absorbing part; c) cutting the material of theshock-absorbing part provided in the piercing part and the groove; andd) peeling off the transparent member from the adhesive tape.
 11. Amanufacturing method of a semiconductor device, the semiconductor deviceincluding a semiconductor element and a transparent member separatedfrom the semiconductor element by a designated length and facing thesemiconductor element, the manufacturing method comprising the steps of:a) forming a groove by cutting in an adhesive tape by a designatedlength; b) adhering the transparent member on the adhesive tape wherethe groove is formed; c) forming a piercing part having a width shorterthan the groove of the adhesive tape, at a part of the transparentmember corresponding to the groove of the adhesive tape; d) filling inbetween the semiconductor element and the transparent member with amaterial of an air part forming member, and curing the material of theair part forming member; e) filling in the piercing part with a materialof a shock-absorbing part configured to ease a stress to the transparentmember, and curing the material of the shock-absorbing part; f) cuttingthe material of the air part forming member provided in the groove andthe material of the shock-absorbing part provided in the piercing part;and g) peeling off the transparent member from the adhesive tape.
 12. Amanufacturing method of a semiconductor device, the semiconductor deviceincluding a semiconductor element and a transparent member separatedfrom the semiconductor element by a designated length and facing thesemiconductor element, the manufacturing method comprising the steps of:a) forming a groove by cutting into an adhesive tape by a designatedlength; b) adhering the transparent member on the adhesive tape wherethe groove is formed; c) forming a piercing part having a width shorterthan the groove of the adhesive tape, at a part of the transparentmember corresponding to the groove of the adhesive tape; d) filling inbetween the semiconductor element and the transparent member with amaterial of an air part forming member, and curing the material of theair part forming member; e) applying the step c) again so that thepiercing part is pierced again and a part of the material of the airpart forming member provided in the groove is cut into; f) filling in apart of the groove where the material of the air part forming member iscut into and the piercing part with a material of a shock-absorbing partconfigured to ease a stress in the transparent member, and curing thematerial of the shock-absorbing part; g) cutting the material of theshock-absorbing part; and h) peeling off the transparent member from theadhesive tape.
 13. A manufacturing method of a semiconductor device, thesemiconductor device including a semiconductor element and a transparentmember separated from the semiconductor element by a designated lengthand facing the semiconductor element, the manufacturing methodcomprising the steps of: a) forming a groove by cutting in an adhesivetape by a designated length; b) adhering the transparent member on theadhesive tape where the groove is formed; c) forming a piercing parthaving a width shorter than the groove of the adhesive tape, at a partof the transparent member corresponding to the groove of the adhesivetape; d) filling in the groove and the piercing part with a material ofa shock-absorbing part configured to ease a stress to the transparentmember, and curing the material of the shock-absorbing part; e) cuttingthe material of the shock-absorbing part provided in the groove and thepiercing part; and f) peeling off the transparent member from theadhesive tape.
 14. A manufacturing method of a semiconductor device, thesemiconductor device including a semiconductor element and a transparentmember separated from the semiconductor element by a designated lengthand facing the semiconductor element, the manufacturing methodcomprising the steps of: a) forming a piercing part in the transparentmember adhered on the adhesive tape and cutting into a part of theadhesive tape corresponding to the piercing part, so that a first grooveis formed; b) filling in the piercing part and the first groove with amaterial of a first shock-absorbing part configured to ease a stress tothe transparent member, and curing the material of the firstshock-absorbing part; c) cutting the material of the shock-absorbingpart provided in the piercing part and the first groove so that a secondgroove whose width is less than the width of the first groove is formed;d) filling in the second groove with a material of a secondshock-absorbing part configured to ease the stress in the transparentmember, and curing the material of the second shock-absorbing part; e)cutting the material of the second shock-absorbing part provided in thesecond groove; and f) peeling off the transparent member from theadhesive tape.
 15. A manufacturing method of a semiconductor device, thesemiconductor device including a semiconductor element and a transparentmember separated from the semiconductor element by a designated lengthand facing the semiconductor element, the manufacturing methodcomprising the steps of: a) forming a groove by cutting into an adhesivetape by a designated length; b) adhering the transparent member on theadhesive tape where the groove is formed; c) forming a piercing parthaving a width shorter than the groove of the adhesive tape, at a partof the transparent member corresponding to the groove of the adhesivetape; d) filling in between the semiconductor element and thetransparent member with a material of an air part forming member, andcuring the material of the air part forming member; e) filling in thepiercing part with an air space forming material removable after aprocess for making a piece of the semiconductor device, and curing theair space forming material; f) cutting the material of the air partforming member provided in the groove and the material of the air spaceforming material provided in the piercing part; and g) peeling off thetransparent member from the adhesive tape.
 16. A manufacturing method ofa semiconductor device, the semiconductor device including asemiconductor element and a transparent member separated from thesemiconductor element by a designated length and facing thesemiconductor element, the manufacturing method comprising the steps of:a) forming a piercing part in the transparent member adhered on theadhesive tape and cutting into a part of the adhesive tape correspondingto the piercing part, so that a first groove is formed; b) filling inthe piercing part and the first groove with a material of ashock-absorbing part configured to ease a stress in the transparentmember, and curing the material of the shock-absorbing part; c) cuttingthe material of the shock-absorbing part provided in the piercing partand the first groove so that a second groove whose width is less thanthe width of the first groove is formed; d) filling in the second groovewith an air space forming material removable after a process for makinga piece of the semiconductor device, and curing the air space formingmaterial; e) cutting the material of the space forming material providedin the second groove; and f) peeling off the transparent member from theadhesive tape.
 17. A manufacturing method of a semiconductor device, thesemiconductor device including a semiconductor element and a transparentmember separated from the semiconductor element by a designated lengthand facing the semiconductor element, the transparent member having anedge surface where a taper is formed, the manufacturing methodcomprising the steps of: a) forming a piercing part in the transparentmember adhered on the adhesive tape and cutting into a part of theadhesive tape corresponding to the piercing part, so that a groove isformed; b) filling in the piercing part and the groove with a materialof a shock-absorbing part configured to ease a stress to the transparentmember, and curing the material of the shock-absorbing part; c) forminga taper groove having a substantially same inclination angle as thetaper of the transparent member, in a substantially center of an upperpart of the material of the shock-absorbing part; d) cutting thematerial of the shock-absorbing part provided in the piercing part andthe groove; and e) peeling off the transparent member from the adhesivetape.